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Si9407BDY
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 60
R DS(on) ( Ω )
0.120 at V GS = - 10 V
0.150 at V GS = - 4.5 V
I D (A) a
- 4.7
- 4.2
Q g (Typ.)
8 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Primary Side Switch
SO-8
S
S
S
1
2
8
7
D
D
S
G
3
4
6
5
D
D
G
Top V ie w
D
Orderin g Information: Si9407BDY-T1-E3 (Lead (P b )-free)
Si9407BDY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 60
± 20
- 4.7
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
- 3.8
- 3.2 b, c
Pulsed Drain Current (10 μs Width)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
- 2.6 b, c
- 20
- 4.2
- 2 b, c
- 15
11
A
mJ
T C = 25 °C
5
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.2
2.4 b, c
W
T A = 70 °C
1.5 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Steady State
R thJA
R thJF
42
19
53
25
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69902
S09-0704-Rev. B, 27-Apr-09
www.vishay.com
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